symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 48 62.5 c/w n-ch 74 110 c/w r jl n-ch 35 60 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r jl p-ch 35 40 c/w thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a 30 -30 20 drain-source voltage 20 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 6.9 5.8 30 2 1.44 -5 -6 2 1.44 a continuous drain current a t a =25c i d t a =70c pulsed drain current b r ja maximum junction-to-ambient a steady-state -30 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s ao460 6 features n-channel p-channel v ds (v) = 30v -30v i d = 6.9a -6a r ds(on) r ds(on) < 28m ? (v gs =10v) < 35 m ? ( v gs = 10 v) < 42m ? (v gs =4.5v) < 58 m ? ( v gs = 4.5 v) the ao460 6 uses advanced trench technology mosfets to provide excellen t r ds(on) and low gate charge. the complementary mosfets may be used to form a level shifted high side switch, and for a host of other applications. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channel p-channel complementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 9
ao460 6 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.9 3 v i d(on) 20 a 22.5 28 t j =125c 31.3 38 34.5 42 m : g fs 10 15.4 s v sd 0.76 1 v i s 3a c iss 680 pf c oss 102 pf c rss 77 pf r g 3 : q g (10v) 13.84 nc q g (4.5v) 6.74 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 16.5 ns q rr 7.8 nc total gate charge v gs =10v, v ds =15v, i d =6.9a input capacitance v gs =0v, v ds =15v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters v gs =10v, v ds =15v, r l =2.2 : , r gen =3 : i f =6.9a, di/dt=100a/ p s gate source charge gate drain charge turn-on delaytime turn-on rise time v ds =5v, i d =6.9a i s =1a v gs =10v, i d =6.9a diode forward voltage r ds(on) static drain-source on-resistance forward transconductance m : v gs =4.5v, i d =5.0a gate threshold voltage v ds =v gs i d =250 p a on state drain current v gs =4.5v, v ds =5v p a gate-body leakage current v ds =0v, v gs =20v drain-source breakdown voltage i d =250 p a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v n-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters reverse transfer capacitance gate resistance output capacitance maximum body-diode continuous current dynamic parameters body diode reverse recovery charge total gate charge i f =6.9a, di/dt=100a/ p s turn-off delaytime turn-off fall time body diode reverse recovery time a: the value of r t ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t ? 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r t ja is the sum of the thermal impedence from junction to lead r t jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 p s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 9
ao460 6 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.2 -2 -2.4 v i d(on) 30 a 28 35 t j =125c 37 45 44 58 m : g fs 13 s v sd -0.76 -1 v i s -4.2 a c iss 920 pf c oss 190 pf c rss 122 pf r g 3.6 : q g (10v) 18.5 nc q g (4.5v) 9.6 nc q gs 2.7 nc q gd 4.5 nc t d(on) 7.7 ns t r 5.7 ns t d(off) 20.2 ns t f 9.5 ns t rr 20 ns q rr 8.8 nc p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 p a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v p a gate-body leakage current v ds =0v, v gs =20v gate threshold voltage v ds =v gs i d =-250 p a on state drain current v gs =-10v, v ds =-5v v gs =-10v, i d =-6a m : v gs =-4.5v, i d =-5a v ds =-5v, i d =-6a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-15v, i d =-6a turn-on delaytime v gs =-10v, v ds =-15v, r l =2.7 : , r gen =3 : turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-6a, di/dt=100a/ p s body diode reverse recovery charge i f =-6a, di/dt=100a/ p s a: the value of r t ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t ? 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r t ja is the sum of the thermal impedence from junction to lead r t jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 p s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r t ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t ? 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r t ja is the sum of the thermal impedence from junction to lead r t jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 p s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 3 / 9
ao4 606 n-channel typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5 v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125 c v ds =5v v gs =4.5 v v gs =10v i d =5a 125c 25c 25c i d =5a 5 v 6 v www.freescale.net.cn 4 / 9
ao 4606 n-channel typical electrical and thermal characteristics 0 2 4 6 8 10 02468101214 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1m s 0 .1 s 1s 10s dc r ds(on) limite d t j(max) =150c t a =25c v ds =15v i d =6.9a single pulse d=t o n / t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 s www.freescale.net.cn 5 / 9
ao4 6 0 6 p-channel typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 0 10 20 30 40 50 60 70 80 345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-6a 25c 125c i d =-6a -4.5v -5v www.freescale.net.cn 6 / 9
ao4 6 0 6 p-channel typical electrical and thermal characteristics 0 2 4 6 8 10 048121620 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s d c r ds(on) limited t j( m a x ) =150c, t a =25c v ds =-15v i d =-6a single pulse d=t o n / t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 7 / 9
q e q h l aaa b e1 c e d a a2 a1 symbols 0.050 bsc 0.50 1.27 8 0.10 0.10 5.00 6.20 4.00 0.51 0.25 --- 1.55 --- 5.80 0 0.25 0.40 --- --- --- --- --- 1.27 bsc 0.19 3.80 4.80 1.45 0.33 --- 0.00 --- --- --- --- 1.50 1.45 --- --- 0.228 0.010 0.016 --- 0 --- --- --- --- 0.057 0.007 0.013 --- 0.150 0.189 0.000 --- --- --- --- 0.059 0.057 --- 0.244 8 0.020 0.050 0.004 0.010 0.157 0.197 0.061 0.020 --- 0.004 dimensions in inches dimensions in millimeters max min nom min nom max so-8 package data note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.10 mm (4 mil) unless otherwise specified 3. coplanarity : 0.10 mm 4. dimension l is measured in gage plane recommended land pattern f a y w l c package marking description note: logo - aos logo 4606 - part number code. f - fab location a - assembly location y - year code w - week code. l c - assembly lot code so-8 part no. code logo 4 6 0 6 unit: mm rev. a AO4606 part no. code 4606 www.freescale.net.cn 8 / 9
so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation www.freescale.net.cn 9 / 9
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